LED WITH INTERNALLY CONFINED CURRENT INJECTION AREA

摘要

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

主权项

1. An LED device comprising:
an active layer between a first doped layer and a second doped layer, wherein the first doped layer is doped with a first dopant type and the second doped layer is doped with a second dopant type opposite the first dopant type; a current injection region located within the active layer; and a modified confinement barrier region within the active layer and laterally surrounding the current injection region to confine current that flows through the active layer to an interior portion of the LED device and away from sidewalls of the LED device.