发明名称 |
Method for producing a semiconductor device including a bipolar transistor |
摘要 |
A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first electroconduction type and a second semiconductor region of the first electroconduction type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second electroconduction type, and an emitter region including a semiconductor region of the first electroconduction type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region. <IMAGE> |
申请公布号 |
EP0462717(B1) |
申请公布日期 |
2001.01.10 |
申请号 |
EP19910304968 |
申请日期 |
1991.05.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KATAOKA, YUZO;ICHISE, TOSHIHIKO;ISHIZUKA, KEIJI;ASABA, TETSUO |
分类号 |
H01L21/331;H01L21/335;H01L21/74;H01L21/761;H01L29/08;H01L29/417 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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