| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a uniform element separation oxide film on a semiconductor element. <P>SOLUTION: The polymer of hydrocarbon compound containing carbonyl, nitrile or amide affecting group is added to a CMP slurry composition for an oxide film. Further, the CMP slurry compound for oxide film contains hydrochloric acid as a pH modifier. Distilled water or ultrapure water is employed as the solvent of the CMP slurry composition for oxide film while grinding agent contains selia, colloidal or humed type silica. Accordingly, the selection ratio of a nitride film to an oxide film is remarkably improved compared with conventional slurry. <P>COPYRIGHT: (C)2004,JPO</p> |
