发明名称 Fabrication of a FeRAM capacitor using a noble metal hardmask
摘要 A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
申请公布号 US6867053(B2) 申请公布日期 2005.03.15
申请号 US20030629326 申请日期 2003.07.28
申请人 INFINEON TECHNOLOGIES AG 发明人 EGGER ULRICH;ZHUANG HAOREN;BRUCHHAUS RAINER
分类号 H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/00;H01L21/823 主分类号 H01L21/02
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