发明名称 |
Fabrication of a FeRAM capacitor using a noble metal hardmask |
摘要 |
A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
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申请公布号 |
US6867053(B2) |
申请公布日期 |
2005.03.15 |
申请号 |
US20030629326 |
申请日期 |
2003.07.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
EGGER ULRICH;ZHUANG HAOREN;BRUCHHAUS RAINER |
分类号 |
H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/00;H01L21/823 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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