| 发明名称 |
Semiconductor switching device defect recognition method e.g. for sense field effect transistor, involves measuring current on switched contacts of switching device redundantly |
| 摘要 |
Measurement of current (IL) on switched contacts (S,D) of switching device is performed redundantly for defect recognition. An Independent claim is also included for circuit arrangement. |
| 申请公布号 |
DE10057486(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
DE2000157486 |
申请日期 |
2000.11.20 |
| 申请人 |
Continental Teves AG & Co. OHG |
发明人 |
Fey, Wolfgang;Engelmann, Mario;Oehler, Peter |
| 分类号 |
G01R31/26;B60T8/88;B60T13/74;B60T17/22;B62D37/00;G01R19/00;G01R19/25;G01R31/00;G05B9/02;G05B9/03 |
主分类号 |
G01R31/26 |
| 代理机构 |
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代理人 |
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| 地址 |
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