发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remarkably alleviate a disconnection of wirings of electrodes and an increase in the resistance by forming the wirings of the electrodes with a film of at least two laminated layers of the same material of different density of contained oxygen. CONSTITUTION:A film of at least two laminated layers 7, 8 of the same material of different density of contained oxygen is formed for wirings of an electrode. A mask pattern 3 is formed on the film. The exposed part of the film is etched with the pattern 3, and the side face of the layer 8 having relatively high oxygen density of the layers 7, 8 is formed inside from the side face of the layer 7 having relatively low oxygen density on the etched side face of the film. Then, stepwise or tapered electrode wirings 9, 10 are formed. The oblique angle of the side face of the electrode wirings is controlled to the desired value by suitably selecting the oxygen density and thickness of each layer.
申请公布号 JPS58199523(A) 申请公布日期 1983.11.19
申请号 JP19820081576 申请日期 1982.05.17
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 OOFUJI SHINICHI;HOSOYA TETSUO;HASHIMOTO CHISATO
分类号 H01L21/3205;H01L21/28;H01L21/302;H01L21/3065 主分类号 H01L21/3205
代理机构 代理人
主权项
地址