| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device, having a microfabricated pattern structure and low-resistance metal interconnections on a base insulating layer formed on a silicon substrate, as well as a method for manufacturing the same. SOLUTION: This semiconductor device has, on an insulating-film base layer 2 of a silicon substrate 1, metal interconnection layers and an insulating layer 6 in grooves between the adjacent metal interconnection layers as a microfabricated pattern. In this semiconductor device, the metal interconnection layer is a multi-level metal interconnection layer which forms at least a second metal interconnection film 7 on a first metal interconnection film 3. The thickness of the multi-level metal interconnection layer is set to a value in a vicinity of 2, in terms of the aspect ratio that expresses the thickness by the ratio of the depth of a pattern groove, with respect to a prescribed metal interconnection layer width.
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