| 摘要 |
PURPOSE:To manufacture a magnetic-electric conversion circuit having an excellent S/N ratio by excellently enabling alignment and producing output in equilibrium shape by changing the internal resistance of the element extending over a wide range by a magnetic field applied to a gate electrode. CONSTITUTION:Positive voltage is applied to drain electrodes 1, 3 by means of a power supply 40, and a source electrode 2 is grounded. Since positive voltage is applied to the gate electrode 10 by means of a power supply 41, a silicon surface under the gate electrode 10 is inverted, and an N type Y-shaped conducting path is formed. Electrons are branched and flow to the electrode 1 and the electrode 3 from the electrode 2 as an electron flow 100 and an electron flow 101 under the state. When a magnetic field B is vertically applied to the back from the surface of paper in the semiconductor device, the electron flow 100 is decreased by Lorentz force, and an electron flow 102 is added to the electron flow 101 and flows. Accordingly, the direction and magnitude of the magnetic field B can be grasped by the change of currents (the reverse directions of the electron flows) flowing through the drain electrode 1 and the drain electrode 3. |
