ELECTRODE FORMING PROCESS FOR COMPOUND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To assure excellent characteristics while restraining the mutual diffusion between basic crystal and electrode metal from advancement by a method wherein an alloy comprising at least one element out of component elements of a compound semiconductor and a metal is utilized as the material for electrode. CONSTITUTION:An Si doped N type GaAs active layer 2 is grown on a substrate 1 by vapor growing process. Next a recess 6 in a gate part is formed by using a photomask and then a gate 5 is formed by using a photomask and then a gate 5 is formed by evaporation.life off process. An AlAs alloy of basic semiconductor GaAs is applicable to this gate metal. Later a source electrode 4 and a drain electrode 3 are formed using Au, Ge and Ni alloy. Finally the semiconductor device is heat-treated at the temperature of 600 deg.C for 10min to reduce the resistance of electrodes.