| 摘要 |
PURPOSE: An integrated circuit having memory cell and a method for driving the same are provided to take the margin of program interference large, while programming speed is set to be the highest by forming a voltage adjusting unit used with a memory device in a doped well region in an integrated circuit. CONSTITUTION: A memory cell is formed in a p-type well(102) and an n+ source area(105) is connected to VSS (OV) through a conductor(114). The p-type well(102) is connected to a negative voltage source(113) via a p+ well joint region(103) and a conductor(112). The negative voltage source(113) is set as a charge pump, arranged on IC similar to a memory array and a high impedance voltage source(116) and a low impedance voltage source(118) are set as charge pumps. A current gain for making current injected into the p-type well(102) from the low-impedance voltage source(118) to be minimum is obtained and the fluctuation of the memory cell from the low-impedance voltage source(118) is set minimum.
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