| 摘要 |
A capacitor using a high dielectric constant film for a semiconductor memory device, and a fabrication method thereof are provided that improve a process margin and achieve a stable contact. The capacitor can be fabricated by forming an impurity layer at a surface of a semiconductor substrate, forming an interlayer insulation film on the semiconductor substrate having a contact hole filled with a conductive material coupled to the impurity layer, and sequentially forming a first oxide film, a nitride film and a second oxide film on the interlayer insulation film so that the contact hole is exposed therethrough, and the nitride film and the first oxide film are partially exposed through the second oxide film. A diffusion barrier film is formed at outer and side portions of the second oxide film, outer and side portions of the nitride film, side portions of the first oxide film, and on an exposed portion of the contact hole. A first electrode is formed on the diffusion barrier film, however, the diffusion barrier film and the first electrode are removed from an outer portion of the second oxide film to isolate the cell of the memory cell having the capacitor. Finally, a high dielectric constant film is formed on the outer portions of the second oxide film and the diffusion barrier film, and on the first electrode, and a second electrode is formed on the high dielectric constant film.
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