| 摘要 |
PROBLEM TO BE SOLVED: To restrain a Ge silicide layer from flocculating and to form a low-resistance SiGe-silicide layer easily in a silicide forming method of forming a SiGe layer that constitutes source/drain regions. SOLUTION: A method of manufacturing a semiconductor device provided with a distorted Si channel comprises the processes of: forming a gate electrode on a laminated layer composed of a saturated SiGe layer on an Si substrate and a distorted Si layer deposited thereon; forming the source/drain regions using the gate electrode as a mask and providing a channel region in the distorted Si layer between the source/drain regions; turning at least the surface regions of the source/drain regions amorphous; depositing a metal layer at least on the regions turned amorphous; subjecting the regions turned amorphous and the metal layer to a thermal treatment so as to enable them to react on each other to turn the metal layer present on the regions turned amorphous to a metal silicide layer; and removing the residual disused metal layer. COPYRIGHT: (C)2005,JPO&NCIPI
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