| 摘要 |
A film transistor and a manufacturing method therefor, an array substrate and a manufacturing method therefor, and a display apparatus. The manufacturing method for the film transistor (200) comprises: forming an active layer (210), a gate (232), a source electrode (231) and a drain electrode (233) which are respectively electrically connected with the active layer (210), and a gate insulation layer (220) disposed between the gate (232) and the active layer (210). The gate (232), the source electrode (231) and the drain electrode (233) are enabled to be formed in the same composition process. The method can reduce the number of masking plates used in the manufacturing process of the film transistor (200) or the array substrate (20), reduce the technical process, improve the production power and decrease the production cost. |
