| 摘要 |
According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more. |
