发明名称 PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION
摘要 An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
申请公布号 US2017062184(A1) 申请公布日期 2017.03.02
申请号 US201514838086 申请日期 2015.08.27
申请人 APPLIED MATERIALS, INC. 发明人 Tran Toan Q.;Park Soonam;Weng Zilu;Lubomirsky Dmitry
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. An apparatus for plasma processing, comprising: a first plasma source that produces first plasma products; a first planar electrode comprising a first plate that defines a plurality of first apertures therethrough, a first side of the first planar electrode being disposed relative to the first plasma source such that the first plasma products pass away from the first plasma source through the plurality of first apertures to a second side of the first planar electrode; a gas distribution device comprising a second plate that defines a plurality of second apertures therethrough, a first side of the gas distribution device being disposed facing the second side of the first planar electrode, such that the first plasma products continue through the plurality of second apertures to a second side of the gas distribution device, a plasma blocking screen comprising a third plate that defines a plurality of fourth apertures therethrough, a first side of the plasma blocking screen being disposed facing the second side of the gas distribution device such that the first plasma products pass through the plurality of fourth apertures to a second side of the plasma blocking screen; and a chuck that faces the second side of the plasma blocking screen, the plasma blocking screen and the chuck defining a process chamber therebetween; wherein the fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
地址 Santa Clara CA US