发明名称 |
ISOLATED SEMICONDUCTOR LAYER IN BULK WAFER BY LOCALIZED SILICON EPITAXIAL SEED FORMATION |
摘要 |
An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer. |
申请公布号 |
EP3132468(A1) |
申请公布日期 |
2017.02.22 |
申请号 |
EP20150780680 |
申请日期 |
2015.04.13 |
申请人 |
Texas Instruments Incorporated |
发明人 |
CAROTHERS, Daniel Nelson;DEBORD, Jeffrey R. |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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