VERTICAL MEMORY DEVICES HAVING DUMMY CHANNEL REGIONS

摘要

A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate adjacent the channel regions, each of the gate electrodes extending different lengths, and a plurality of dummy channel regions adjacent first ends of the plurality of gate electrode layers, wherein the substrate includes a substrate insulating layer formed below the plurality of dummy channel regions.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a gate electrode layer structure that includes a plurality of spaced-apart gate electrode layers stacked on an upper surface of the semiconductor substrate; a plurality of channel regions penetrating the gate electrode layers; a plurality of dummy channel regions penetrating at least the lowermost of the gate electrode layers; and a substrate insulating layer between the semiconductor substrate and the dummy channel regions.