Method for fabricating anti-reflection film with anti-PID effect

摘要

Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes. The deposition steps may be more than 2 steps. The obtained anti-reflection film has anti-PID effect, thus can improve the electrical performance of solar cells.

主权项

1. A method for fabricating an anti-reflection film with anti-PID effect, the anti-reflection film having a multi-layer film structure which is formed on a silicon wafer substrate and has refractive indexes in descending order, characterized in that the method for manufacturing the multi-layer film structure having refractive indexes in descending order comprises the following steps of:
(1) vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; (2) pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-5.2 slm and pressure of 1700 mTorr for 3 minutes; (3) testing pressure to keep an inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minutes; (4) pre-depositing at 420° C. with an ammonia gas flux of 0.1-0.9 slm, a silane flux of 180-200 sccm, a nitrous oxide flux of 3.5-5.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minutes; (5) depositing a film at 450° C., with an ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-8500 sccm, a nitrous oxide flux of 2-3.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3-5 minutes; and (6) blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-12 slm and pressure of 10000 mTorr for 5-8 minutes.