GATE-INDUCED SOURCE TUNNELING FIELD-EFFECT TRANSISTOR

摘要

A tunneling field-effect transistor includes: 1) a source region; 2) a drain region; 3) a channel region extending between the source region and the drain region; 4) a gate electrode spaced from the channel region; and 5) a dielectric layer disposed between the gate electrode and the channel region. The gate electrode includes a first section including a first conductive material M1 and a second section including a different, second conductive material M2, and the first section is electrically connected to the second section.