SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, AND ELECTRONIC APPARATUS

摘要

The present disclosure relates to a semiconductor element, a manufacturing method of a semiconductor element, and an electronic apparatus, which enable suppression of crack occurrences and leaks.;The present technology has a laminated structure including an insulating film having a CTE value between those of metal and Si and disposed under a metal wiring, and P—SiO (1 μm) having good coverage and disposed as a via inner insulating film in a TSV side wall portion. As the insulating film having a CTE that is in the middle between those of metal and Si, for example, SiOC is used with a thickness of 0.1 μm and 2 μm respectively in the via inner insulating film and a field top insulating film continuous to the via inner insulating film. The present disclosure can be applied to, for example, a solid-state imaging element used in an imaging device.

主权项

1. A semiconductor element, comprising:
a through silicon via (TSV) formed in a substrate; a side wall film formed in a side wall portion of the TSV and having good coverage; and an insulating film formed in a layer under a metal wiring except for a via portion of the TSV, wherein the insulating film is of a film type in which a coefficient of thermal expansion has a value between a coefficient of thermal expansion for the substrate and a coefficient of thermal expansion for the metal wiring.