Film Forming Apparatus and Film Forming Method

摘要

Provided is a film forming apparatus in which a thin film can be formed with a good coverage on the inner surface of a hole with high aspect ratio by preventing the negative electric charges from getting concentrated on the substrate edge portion at the time of etching processing. The film forming apparatus is provided with: a vacuum chamber in which a target is disposed; a stage for holding a substrate inside the vacuum chamber; a first electric power for applying predetermined electric power to the target; and a second electric power for applying AC power to the stage. The film forming apparatus performs: film forming processing in which the target is sputtered by applying electric power to the target by the first electric power; and etching processing in which a thin film formed on the substrate is etched by applying AC power to the stage by the second electric power.

主权项

1. A film forming apparatus comprising:
a vacuum chamber in which a target is disposed; a stage for holding a substrate inside the vacuum chamber; a first power source for applying a predetermined electric power to the target; a second power source for applying AC power to the stage, thereby performing: film forming processing in which the target is sputtered by applying electric power by the first power source to the target; and etching processing in which a thin film formed on the substrate is etched by applying AC power by the second power source to the stage, characterized in that the film forming apparatus has disposed a deposition prevention plate which encloses the stage, let that side of the substrate held in position by the stage which is subjected to film forming be defined as an upper side, the film forming apparatus further comprises a driving means for moving up and down the deposition prevention plate between a film forming position in which that portion of the deposition prevention plate which is proximate to the substrate is positioned on a plane substantially equal to an upper surface of the substrate, and an etching position in which the said portion of the deposition prevention plate is positioned above the upper surface of the substrate.