| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide semiconductor layer which achieves a large area of a substrate and improved properties to enable manufacturing of a transistor having intended high electron field-effect mobility, to thereby achieve the practical use of a large-sized display device, a high-performance semiconductor device and the like.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a gate electrode layer on a substrate having an insulating surface; forming a gate insulation layer on the gate electrode layer; forming an oxide semiconductor layer on the gate insulation layer; forming a source electrode layer and a drain electrode layer on the oxide semiconductor layer; forming an oxygen-containing insulation layer on the oxide semiconductor layer, the source electrode layer and the drain electrode layer; forming a hydrogen-containing insulation layer on the oxygen-containing insulation layer; and subsequently performing a heat treatment to supply hydrogen in the hydrogen-containing insulation layer to at least the oxide semiconductor layer.SELECTED DRAWING: Figure 1 |
