| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing voltage dependency of a capacitance formed with a wiring pattern, with no increase in parasitic capacitance.SOLUTION: In a semiconductor device, a pair of metal wiring patterns which extends in the first direction and forms an electrode of a capacitive element is formed in a wiring layer above a semiconductor substrate, and on a well formed at the semiconductor substrate, a polysilicon film which is an electrically floating dummy pattern is formed through an insulator film. A p-type well and an n-type well, above which the polysilicon film which is a dummy pattern is formed, are arranged below the metal wiring pattern, so that a voltage dependency of parasitic capacitance related to a p-type well region and that related to an n-type well region are offset, thereby reducing voltage dependency of a capacitance formed by the wiring pattern. |
