发明名称 |
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE |
摘要 |
An SRAM cell with dynamic split ground (GND) and split wordline (WL) for extreme scaling is disclosed. The memory cell includes a first access transistor enabled by a first wordline to control access to cross coupled inverters by a first bitline. The memory cell further includes a second access transistor enabled by a second wordline to control access to the cross coupled inverters by a second bitline. The memory cell further includes a split ground line comprising a first ground line (GNDL) separated from a second ground line (GNDR). The GNDL is connected to a transistor of a first inverter of the cross coupled inverters and the GNDR is connected to a first transistor of a second inverter of the cross coupled inverters. |
申请公布号 |
US2016155493(A1) |
申请公布日期 |
2016.06.02 |
申请号 |
US201514963586 |
申请日期 |
2015.12.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WONG Robert C. |
分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
1. A memory cell, comprising:
a first access transistor enabled by a first wordline to control access to cross coupled inverters by a first bitline; a second access transistor enabled by a second wordline to control access to the cross coupled inverters by a second bitline; and a split ground line comprising a first ground line (GNDL) separated from a second ground line (GNDR), the GNDL being connected to a transistor of a first inverter of the cross coupled inverters and the GNDR being connected to a first transistor of a second inverter of the cross coupled inverters. |
地址 |
Armonk NY US |