METHOD FOR MANUFACTURING THREE-DIMENSIONAL INTEGRATED CIRCUIT

摘要

A method for manufacturing a three-dimensional integrated circuit is disclosed. The method includes: providing a substrate; forming at least one metal layer and at least one dielectric layer on the substrate; forming a plurality of electrical connection points on the metal layer; dicing to generate a plurality package units, each of the package units adhered to a diced substrate; reversing each of the package units and connecting each of the reversed package units to a surface of a wiring substrate to form an integrated substrate; and removing the diced substrate of each of the reversed package units. The present disclosure can improve an assembling process.

主权项

1. A method for manufacturing a three-dimensional integrated circuit, comprising:
providing a substrate; forming at least one metal layer and at least one dielectric layer on the substrate; forming a plurality of electrical connection points on the metal layer; dicing to generate a plurality of package units, and each of the package units adhered to a diced substrate; flipping each of the package units, and bonding each of the flipped package units to a surface of a wiring substrate to form an integrated substrate, wherein the integrated substrate comprises a high density connection area and a low density connection area, the high density connection area comprises an area of an outer surface of each of the flipped package units, and the low density connection area comprises an area which is not covered by each of the flipped package unit; and removing the diced substrate of each of the flipped package units.