HIGH-VOLTAGE SUPER-JUNCTION IGBT MANUFACTURING METHOD

摘要

A method for manufacturing a high-voltage super junction insulated gate bipolar transistor (IGBT), including the following steps: respectively etching trenches on N type and P type substrates; respectively filling the trenches with epitaxy P type and N type monocrystalline silicon, and flattening and thinning the facades after filling; polishing the facades of silicon wafers, and treating the silicon wafers through acid; accurately aligning the two treated silicon wafers and bonding; thinning the back surface of the bonded silicon wafer to remove an N layer to expose an N and P alternately distributed layout; repeating step 3 and step 4 to bond for the second time; fabricating the facade of the device, and fabricating a back surface collector layer by depositing a P type strain SiGe layer; fabricating a metal layer on the back surface by using metal Al/Ti/Ni/Ag. The super junction IGBT manufactured by a twice bonding method has a larger depth-width ratio, thus being suitable for high-voltage devices.