发明名称 |
Self-formation of high-density arrays of nanostructures |
摘要 |
A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer. |
申请公布号 |
US9324794(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201514726104 |
申请日期 |
2015.05.29 |
申请人 |
International Business Machines Corporation |
发明人 |
Dimitrakopoulos Christos D.;Kim Jeehwan;Park Hongsik;Shin Byungha |
分类号 |
H01L29/06;C30B25/18;H01L29/16;H01L29/32;C30B29/36;C30B33/06;B82Y10/00;B82Y40/00;H01L29/12 |
主分类号 |
H01L29/06 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Percello Louis J. |
主权项 |
1. A semiconductor device, comprising:
a flexible substrate; a crystalline semiconductor layer bonded to the flexible substrate, the crystalline semiconductor layer being cracked to form parallel structures along at least one direction; and a two-dimensional material formed on the crystalline semiconductor layer being separated at cracks in the crystalline semiconductor layer to form nanostructures. |
地址 |
Armonk NY US |