METHOD FOR MANUFACTURING BONDED WAFER

摘要

The present invention provides a method for manufacturing a bonded wafer whereby gas ions such as hydrogen ions are implanted from the surface of a bond wafer to form an ion implantation layer in the interior of the wafer, the surface of the bond wafer in which ions have been implanted and the surface of a base wafer are bonded to each other directly or with an insulation layer therebetween, and the bond wafer is delaminated at the ion implantation layer to produce a bonded wafer having a thin film, after which a RTA process is performed in an environment containing hydrogen gas to planarize the surface of the thin film, with the RTA process being performed at a temperature of 1100°C-1250°C, and a sacrificial oxidation process being performed, after which the surface of the thin film is subjected to CMP with an allowance of 30-80 nm. Thus, it is possible to provide a bonded wafer manufacturing method capable of producing a bonded wafer for which both the uniformity of the in-plane film thickness and the surface roughness of the thin film are excellent, with no concentration of LDPs and no slip dislocations.