发明名称 PHOTO-SWITCHABLE AND ELECTRICALLY-SWITCHABLE ORGANIC FIELD-EFFECT TRANSISTOR, MANUFACTURING METHOD THEREOF AND USE THEREOF AS STORAGE DEVICE
摘要 FIELD: electronics.SUBSTANCE: invention relates to organic electronics, specifically to memory devices based on organic field effect transistors fabricated using photochromic compounds as part of active layer disposed at boundary between layer of semiconductor material and insulator. Invention provides formation and use of photo-switchable and electrically switchable organic field effect transistors, having in their structure a layer of photochromic molecules located on boundary between layer of semiconductor material and an insulator.EFFECT: technical results achieved in implementation of claimed invention are a simple structure and technology of manufacturing photo-switchable and electrically switchable field effect transistors; possibility of creating multiple discrete states with different threshold voltages; achieving significant differences in currents Ifor different states (up to 10,000 times); providing spectral sensitivity of device: impact of light pulses of different wavelengths converts transistor in different states; enabling use of photo-switchable and electrically switchable FET as multibit memory cell; enabling optical and electrical programming of said memory cells; higher information recording density by implementing multibit mode.4 cl, 10 dwg
申请公布号 RU2580905(C2) 申请公布日期 2016.04.10
申请号 RU20140111100 申请日期 2014.03.25
申请人 FEDERALNOE GOSUDARSTVENNOE BJUDZHETNOE UCHREZHDENIE NAUKI INSTITUT PROBLEM KHIMICHESKOJ FIZIKI ROSSIJSKOJ AKADEMII NAUK (IPKHF RAN) 发明人 FROLOVA LJUBOV ANATOLEVNA;SANINA NATALIJA ALEKSEEVNA;TROSHIN PAVEL ANATOLEVICH;ALDOSHIN SERGEJ MIKHAJLOVICH
分类号 H01L51/05;B82B1/00;B82B3/00;H01L51/40 主分类号 H01L51/05
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