| 发明名称 |
SEMICONDUCTOR DEVICE HAVING WORK FUNCTION CONTROL LAYER AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device, including a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer. |
| 申请公布号 |
US2016093617(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514635253 |
申请日期 |
2015.03.02 |
| 申请人 |
PARK Jung-Min;KIM Suk-Hoon;SONG Min-Woo;WON Seok-Jun;LEE In-Hee;HONG Kyung-Il;HYUN Sang-Jin |
发明人 |
PARK Jung-Min;KIM Suk-Hoon;SONG Min-Woo;WON Seok-Jun;LEE In-Hee;HONG Kyung-Il;HYUN Sang-Jin |
| 分类号 |
H01L27/092;H01L29/51;H01L29/423;H01L29/49 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; an interlayer insulating layer having a trench on the substrate, the trench having a bottom and sidewalls; a dielectric layer on the bottom and sidewalls of the trench; a work function control layer on the dielectric layer; a wetting layer on the work function control layer; a gap fill layer on the wetting layer; and a reactive layer between the wetting layer and the gap fill layer, the reactive layer being thicker than the gap fill layer. |
| 地址 |
Seoul KR |
