发明名称 |
Method for manufacturing nitride semiconductor device |
摘要 |
The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked. |
申请公布号 |
US9281187(B2) |
申请公布日期 |
2016.03.08 |
申请号 |
US201314397589 |
申请日期 |
2013.04.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
Sato Ken;Goto Hirokazu;Shikauchi Hiroshi;Tsuchiya Keitaro;Shinomiya Masaru;Hagimoto Kazunori |
分类号 |
H01L21/36;H01L21/02;C23C16/30;C30B25/02;C30B29/40;H01L29/778;H01L29/15;H01L33/32;H01L29/20 |
主分类号 |
H01L21/36 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method comprising:
growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein; the first nitride semiconductor layer and the second nitride semiconductor layer are stacked; a ratio of the V group element raw material gas to the III group element raw material gas (V/III ratio) in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in step of growing the second nitride semiconductor layer; and the first nitride semiconductor layer is a GaN layer and the second nitride semiconductor layer is an AlN layer. |
地址 |
Tokyo JP |