Image sensor, imaging apparatus, and apparatus and method for manufacturing image sensor

摘要

There is provided an apparatus including an image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), including a light receiving unit, formed in a semiconductor substrate, which receives incident light, an anti-reflection film formed on a back-surface side of the semiconductor substrate in which the light receiving unit is formed, and a silicon oxide film, formed on a back-surface side of the anti-reflection film, which has a refractive index lower than a silicon nitride film and has a higher density in a back-surface side than in a front-surface side thereof.

主权项

1. An image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), comprising:
a light receiving unit in a semiconductor substrate; an anti-reflection film on a back-surface side of the semiconductor substrate; and an insulating film comprising silicon and oxygen throughout from a back-surface side of the insulating film to a front-surface side of the insulating film, the insulating film being on a back-surface side of the anti-reflection film, the insulating film having (a) a refractive index that is lower than that of a silicon nitride film and (b) a density that is higher at the back-surface side than that at the front-surface side of the insulating film,
wherein the insulating film includes a layer of a silicon oxide film containing no nitrogen at the front-surface side of the insulating film and includes a layer of a silicon oxynitride film containing nitrogen at the back-surface side of the insulating film; and a light shielding film,
wherein the light shielding film is near a boundary with a neighboring pixel between the layer of the silicon oxide film containing no nitrogen and the layer of the silicon oxynitride film containing nitrogen.