| 发明名称 | Thermoelectric conversion device | ||
| 摘要 | A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film. | ||
| 申请公布号 | US9269883(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414539028 | 申请日期 | 2014.11.12 |
| 申请人 | FUJITSU LIMITED | 发明人 | Baniecki John David;Ishii Masatoshi;Kurihara Kazuaki;Yamanaka Kazunori |
| 分类号 | H01L35/00;H01L35/32;H01L35/22;H01L35/02;H01L35/26;H01L35/12;H01L35/14 | 主分类号 | H01L35/00 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A thermoelectric conversion device, comprising: a substrate; a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, the stack being formed over the substrate; a first electrode in electrical connection to a top end of the stack; and a second electrode in electrical connection to a bottom end of the stack, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film, there being induced an electromotive force between the top end and the bottom end of the stack when the top end of the stack is exposed to a first temperature and the bottom end of the stack is exposed to a second temperature. | ||
| 地址 | Kawasaki JP | ||