发明名称 |
Structure and method of forming enhanced array device isolation for implanted plate EDRAM |
摘要 |
A memory device is provided including a semiconductor on insulator (SOI) substrate including a first semiconductor layer atop a buried dielectric layer, wherein the buried dielectric layer is overlying a second semiconductor layer. A capacitor is present in a trench, wherein the trench extends from an upper surface of the first semiconductor layer through the buried dielectric layer and extends into the second semiconductor layer. A protective oxide is present in a void that lies adjacent the first semiconductor layer, and a pass transistor is present atop the semiconductor on insulator substrate in electrical communication with the capacitor. |
申请公布号 |
US9257433(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201514736695 |
申请日期 |
2015.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Ho Herbert L.;Kusaba Naoyoshi;Nummy Karen A.;Radens Carl J.;Todi Ravi M.;Wang Geng |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. |
主权项 |
1. A memory device comprising:
a semiconductor on insulator (SOI) substrate including, from top to bottom, a first semiconductor layer, a buried dielectric layer, and a second semiconductor layer; wherein said first semiconductor layer has a recessed vertical edge relative to at least a vertical edge of said buried dielectric layer; a protective oxide positioned adjacent said recessed vertical edge of said first semiconductor layer, wherein said protective oxide is present only on one side of said trench; a capacitor present in a trench, wherein said trench extends from an upper surface of said SOI substrate through said buried dielectric layer and extends into said second semiconductor layer, and a pass transistor in electrical communication with said capacitor and on a portion of said first semiconductor layer that is present on another side of said trench that is opposite said one side of said trench containing said protective oxide. |
地址 |
Armonk NY US |