| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask blank having a phase shift film having high resistance to an exposure light of ArF excimer laser and easy to detect etching endpoint for detecting a boundary with a transparent substrate when conducting EB defect correction.SOLUTION: The mask blank has a phase shift film having one pair or more of combination of laminate structures of low transmission layer and high transmission layer on a transparent substrate, the phase shift film has a function transmitting an exposure light of ArF excimer laser at a predetermined transmission coefficient and generating predetermined phase difference, the low transmission layer and the high transmission layer are formed by a material consisting of silicon and nitrogen or a material containing one or more elements selected from semi-metallic element, non-metallic element and inert gas, the phase shift film has a bottom layer at a position contacting the transparent substrate, the bottom layer contains silicon and nitrogen and is formed by a material containing substantially no metal nor oxygen and having a percentage of the content of silicon to the total content of silicon and nitrogen of 50% or more.SELECTED DRAWING: Figure 1 |
