Semiconductor device and manufacturing method thereof

摘要

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer comprising indium over a substrate, wherein the oxide semiconductor layer comprises a crystal region; forming a source electrode and a drain electrode over and in contact with the oxide semiconductor layer, wherein part of the oxide semiconductor layer is not covered by the source electrode and the drain electrode; and removing an upper surface region and side surface regions of the oxide semiconductor layer at the uncovered part of the oxide semiconductor layer, wherein the crystal region has a c-axis orientation.