FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET comprises a substrate having a top surface and an insulation. At least a recessed fin is extended upwardly from the top surface of the substrate, and at least a gate stack formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack. The insulation comprises a lateral portion adjacent to the recessed fin, and a central portion contiguous to the lateral portion, wherein a top surface of the lateral portion is higher than a top surface of the central portion. A top surface of the recessed fin is lower than the top surface of the central portion of the insulation.

主权项

1. A fin field effect transistor (FinFET), comprising:
a substrate, having a top surface, at least a recessed fin extending upwardly from the top surface of the substrate and at least a gate stack formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack; an insulation formed on the top surface of the substrate, comprising:
a lateral portion adjacent to the recessed fin; anda central portion contiguous to the lateral portion, and a top surface of the lateral portion higher than a top surface of the central portion, wherein a top surface of the recessed fin is lower than the top surface of the central portion of the insulation.