发明名称 PROGRAMMING AND VERIFYING METHOD FOR NON VOLATILE MEMORY DEVICE
摘要 PURPOSE: A program verification method of nonvolatile memory device for setting the data of a page buffer which corresponding cells are artificially programmed at specific time are provided to reduce a time for program verification operation without performing program operation at a time for completing the program. CONSTITUTION: A program verification method of nonvolatile memory device for setting the data of a page buffer which corresponding cells is as follows. A program operation is performed(610). The device confirms whether the program object cells are programmed as an abnormal state of verification voltage(620). The number of fail bits is counted in case there are confirmation result fail cells(630).
申请公布号 KR20090120685(A) 申请公布日期 2009.11.25
申请号 KR20080046615 申请日期 2008.05.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, JUNG CHUL
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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