| 摘要 |
A nonvolatile memory device including a floating gate formed on a tunnel oxide layer that is formed on a semiconductor substrate. The device also includes a drain region formed in the substrate adjacent to one side of the floating gate, a source region formed in the substrate adjacent to another side of the floating gate, where the source region is apart from the floating gate, and an inter-gate insulating layer formed on a portion of an active region between the source region and the floating gate and on a sidewall of the floating gate directing toward the source region, as well as on a sidewall of the floating gate directing toward the drain region. The device includes a word line formed over the floating gate and being across the substrate in one direction, and a field oxide layer interposing between the word line and the source region and between the word line and the drain region, and intersecting the word line.
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