| 摘要 |
PROBLEM TO BE SOLVED: To provide a constitution of a thin film magnetic storage device which supplies a data write current according to a write data level with a simple circuit constitution. SOLUTION: In each memory cell column, a bit line BL is connected with data buses DBa and DBb respectively through a drive switch at a node Na corresponding to one end side and a node Nb corresponding to the other end side, and connected with a reversed phase data bus/WDB through the drive switch in an intermediate node Nm. The data write current flows by turning on the drive switch of the intermediate node and one of the drive switches on both ends according to positional relation of a selected memory cell and the middle node in the bit line of the selected column. COPYRIGHT: (C)2009,JPO&INPIT
|
