METHOD OF FORMING A SEMICONDUCTOR MEMORY DEVICE

摘要

A method for forming a semiconductor memory device is provided to prevent the generation of the bridge between gate lines and a disconnection phenomenon of a gate line by performing a thermal process on a semiconductor substrate with a planarization layer. A tunnel insulating layer(202), a first conductive layer(204), a dielectric layer(206), a second conductive layer(208) are formed on a semiconductor substrate(200). A planarization layer(212) is formed in an upper part of the metal layer to reduce a step generated by a rough surface of the metal layer. The thermal process is performed to form a flat hard mask. A hard mask layer(215), a reflection preventing layer(216), a photoresist pattern are successively formed on the upper part of the planarization layer. The gate patterning process is performed according to the photoresist pattern. The planarization layer is composed of the HSQ(Hydrogen Silsesquoxane) layer.