| 摘要 |
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate and a 3D structure disposed over the substrate. The semiconductor device further includes a dielectric layer disposed over the 3D structure, a WFMG layer disposed over the dielectric layer, and a gate structure disposed over the WFMG layer. The gate structure traverses the 3D structure and separates a source region and a drain region of the 3D structure. The source and drain region define a channel region therebetween. The gate structure induces a stress in the channel region. |
