SINGLE ALD CYCLE THICKNESS CONTROL IN MULTI-STATION SUBSTRATE DEPOSITION SYSTEMS

摘要

Disclosed are methods for depositing materials of films on a plurality of semiconductor substrates in a multi-station processing chamber. The methods comprise the following steps: loading a first set of one or more substrates from the first set of one or more process stations to the inside of a processing chamber; and performing N film deposition cycles in order to deposit the film material on the substrates of the first set. After, the methods comprise the following steps: transferring the substrates of the first set from the process stations of the first set to the second set of one or more process stations; loading a second set of one or more substrates to the process stations of the first set; and performing N′ (N′ is not the same with the N) film deposition cycles in order to deposit the film material on the substrates of the first set and the substrates of the second set. Moreover, devices which can be used for performing similar motions and a computer-readable means are disclosed.