Optical-semiconductor device

摘要

The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer, on an optical-semiconductor element-mounting substrate so that the encapsulating resin layer faces the optical-semiconductor element-mounting substrate; followed by compression-molding, in which the wavelength conversion layer is present on an upper part of a molded body in which the optical-semiconductor element is embedded therein, but is not present on a side surface of the molded body.

主权项

1. An optical-semiconductor device comprising
a substrate, an optical-semiconductor element on the substrate, a compression molded body comprising a two-step cured encapsulating resin layer comprising a condensation-addition curing type silicone resin in an amount of 50% or more of components constituting the encapsulating layer, and a wavelength conversion layer containing light wavelength-converting particles, wherein the wave conversion layer is laminated directly or indirectly on said encapsulating resin layer, the encapsulating resin layer embeds the optical-semiconductor element, the wavelength conversion layer is not present in a side surface of said molded body, and the optical-semiconductor device satisfies the following formulae (I) and (II) when a thickness of the encapsulating resin layer is regarded as (X) (mm), an area of the sheet for optical-semiconductor element encapsulation necessary for encapsulating one optical-semiconductor element is regarded as (Y) (mm2) and an area of an upper part of the optical-semiconductor element is regarded as (A) (mm2):
0.5≦X≦2.0  (I){X×tan(75°)}2×π+A≦Y≦{X×tan(80°)}2×π+A  (II).