发明名称 MULTI-QUANTUM WELL STRUCTURE AND LIGHT-EMITTING DIODE USING SAME
摘要 Provided are a multi-quantum well structure and a light-emitting diode using same. A light-emitting region of the light-emitting diode is provided with at least one quantum well structure, wherein the structure comprises a first protective layer, a first transition layer on the first protective layer, a quantum well layer on the first transition layer, a second transition layer on the quantum well layer, a second protective layer on the second transition layer and a quantum barrier layer on the second protective layer.
申请公布号 WO2015143902(A1) 申请公布日期 2015.10.01
申请号 WO2014CN94873 申请日期 2014.12.25
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 LIU, ZHIBIN;CHEN, SHASHA;ZHANG, DONGYAN;LIU, XIAOFENG;WANG, DUXIANG
分类号 H01L33/00;H01L33/06 主分类号 H01L33/00
代理机构 代理人
主权项
地址