发明名称 |
MULTI-QUANTUM WELL STRUCTURE AND LIGHT-EMITTING DIODE USING SAME |
摘要 |
Provided are a multi-quantum well structure and a light-emitting diode using same. A light-emitting region of the light-emitting diode is provided with at least one quantum well structure, wherein the structure comprises a first protective layer, a first transition layer on the first protective layer, a quantum well layer on the first transition layer, a second transition layer on the quantum well layer, a second protective layer on the second transition layer and a quantum barrier layer on the second protective layer. |
申请公布号 |
WO2015143902(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
WO2014CN94873 |
申请日期 |
2014.12.25 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
LIU, ZHIBIN;CHEN, SHASHA;ZHANG, DONGYAN;LIU, XIAOFENG;WANG, DUXIANG |
分类号 |
H01L33/00;H01L33/06 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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