| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce a layout area using a cell capacitor equipped in a redundancy memory cell array as the storage capacitor of internal power. CONSTITUTION: A redundancy memory cell(20) is in connection between a bit-line(BL) and an internal node(nd20). The redundancy memory cell is composed of n-type metal oxide semiconductor transistor(N20) and a cell capacitor(C20). A power line(PL) is in connection with the internal node. A switching part(20) is composed of an n-type metal oxide semiconductor(N21) and the other n-type metal oxide semiconductor(N22). The n-type metal oxide semiconductors function as a switching element which turns on in response with a reverse repair signal(REPAIRB).
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