SEMICONDUCTOR DEVICE

摘要

Provided is a transistor which has favorable transistor characteristics and includes an oxide semiconductor, and a highly reliable semiconductor device which includes the transistor including the oxide semiconductor. In the semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in this order, a sidewall insulating film is formed along side surfaces and a top surface of the gate electrode, and the oxide semiconductor film is subjected to etching treatment so as to have a cross shape having different lengths in the channel length direction or to have a larger length than a source electrode and a drain electrode in the channel width direction. Further, the source electrode and the drain electrode are formed in contact with the oxide semiconductor film.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film comprising:
a channel formation region;a first region protruding from the channel formation region in a first channel width direction; anda second region protruding from the channel formation region in a second channel width direction opposite to the first channel width direction; a source electrode in contact with a first side surface of the channel formation region; a drain electrode in contact with a second side surface of the channel formation region; a gate electrode overlapping with the first region, the second region, and the channel formation region; and an insulating film between the oxide semiconductor film and the gate electrode, wherein the channel formation region is provided between the first region and the second region, and wherein the channel formation region is provided between the source electrode and the drain electrode in a channel length direction.