| 摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor device including a transistor using an oxide semiconductor film, in which stable electric characteristics can be provided and high reliability can be achieved; and a structure achieving high-speed response and high-speed operation in a semiconductor device.SOLUTION: A semiconductor device includes a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer. In the semiconductor device, the sidewall insulating layer has an oxygen-excess region, and is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating film is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched. |
