| 摘要 |
The present invention inhibits, in forming a nitride semiconductor layer on a silicon wafer through epitaxial growth, the wafer from breaking or from warping significantly because of extended dislocation. The present invention comprises calculating the shape value of a bevel from the values of parameters and regulating the shape of the bevel so as to make the shape value fall within a prescribed range. The shape value is defined by the formula, a1·tanθ1-a2·tanθ2, wherein: a1 (μm) is the first projected length along a front surface (3) between an intersection of an end face (5) and a first inclined face (6) and an intersection of the front surface (3) and the first inclined face (6); a2 (μm) is the second projected length along a back surface (4) between an intersection of the end face (5) and a second inclined face (7) and an intersection of the back surface (4) and the second inclined surface (7); θ1 is the first inclination angle of the first inclined face (6) from the front surface (3); θ2 is the second inclination angle of the second inclined face (7) from the back surface (4); and T (μm) is the spacing between the front surface (3) and the back surface (4). |
