FILM FORMING METHOD AND HEAT TREATMENT APPARATUS

摘要

A film forming method for forming a low dielectric constant film on a substrate that is disposed in a processing chamber in a processing vessel. In a plasma generation chamber that is provided above the processing chamber within the processing vessel, a plasma is generated using a microwave by supplying at least a noble gas. Particles are supplied into the processing chamber from the plasma generation chamber via a shielding part that has shielding properties against ultraviolet light, is provided between the plasma generation chamber and the processing chamber, and has a plurality of openings, through which the plasma generation chamber and the processing chamber communicate with each other, and a low dielectric constant film is formed on a substrate by supplying a precursor gas into the processing chamber. Subsequently, the substrate is subjected to a heat treatment.